Daily Archives: May 25, 2016

On the Sapphire substrate, method of forming a semiconductor light emitting diode chip

A in Sapphire lining end of Shang formed semiconductor glow diode tube core of method, will III-V family nitride gallium base compounds semiconductor and quantum trap structure glow diode tube core graphics design into adjacent two edge Sapphire lining end of solutions acting surface, angle for 120 degrees or 60 degrees of parallelogram or diamond structure, tube core segmentation road direction along Sapphire lining end of of solutions acting direction, and will Sapphire lining end of mill thin to 70 to 250 Micron Zhijian, from back along tube core segmentation road direction cutting, formed tube core.

Technical field

The invention belongs to the field of semiconductor technology, especially on the Sapphire substrate, method of forming a semiconductor light emitting diode chip.
Background art
III-V gallium nitride (GaN) based compound semiconductors and quantum-well structure light emitting diode (LED) with high reliability, high efficiency, quick response and long life expectancy, all solid, the advantages of small size, large-screen displays, traffic signals information indicates that, particularly for lighting has a huge application market. However, because Sapphire is not perpendicular to the cleavage and hardness, it is difficult to cleavage into the square-shaped structure of core, split end of yield, which reduces III-V GaN based compound semiconductors and quantum-well structure light emitting diode (LED) costs, expanding market barriers.
Before the invention of the Sapphire substrate, method of forming a semiconductor light emitting diode chip is: led epitaxial growth on Sapphire substrate structure, preparation of n and p electrodes of the diode, and cutting or scribing methods along the square structure designed core segment of road into a single chip. Due to Sapphire lining end of of solutions acting direction not vertical of, dang tube core of a segmentation side direction along Sapphire lining end of solutions acting direction, another a segmentation side will no longer is Sapphire lining end of solutions acting direction, dang cutting or designated crack Shi, along cutting or designated tablets direction produced serious of collapse side or along non-cutting or designated tablets direction cracking, caused tube core damaged, reduced has yield, to solution this problem, General used increased segmentation road of size (is greater than 60 μ m) and are opposite two times cutting of method, such extended has cutting time, And increased the amount of tools, product yields little, increase the cost of products.
Contents of invention
This invention of purpose is provides a in Sapphire lining end of Shang formed semiconductor glow diode tube core of method, its can overcome in glow diode manufacturing process in the designated tablets or cutting Shi along non-segmentation road direction produced collapse side or cracking of problem, can makes designated tablets or cutting of tube core neatly, segmentation road of size can reduced to 40 μ m, improve has products of produced rate and yield, reduced products cost.
This invention a in Sapphire lining end of Shang formed semiconductor glow diode tube core of method, its features is, will III-V family nitride gallium base compounds semiconductor and quantum trap structure glow diode tube core graphics design into adjacent two edge Sapphire lining end of solutions acting surface, angle for 120 degrees or 60 degrees of parallelogram or diamond structure, tube core segmentation road direction along Sapphire lining end of of solutions acting direction, and will Sapphire lining end of mill thin to 70 to 250 Micron Zhijian, from back along tube core segmentation road direction cutting, formed tube core.
Dividing road of dimension less than 60 μ m, at least 40 μ m.
With dry method carved corrosion or wet method corrosion, and lithography, and stripping, and evaporation or sputtering plating film, and alloy, technology making diode of p electrode and n electrode and formed tube core segmentation road, then will Sapphire lining end of from back with grinding of method or ion reduction thin technology reduction thin and polishing to 70 μ m to 250 μ m Zhijian, makes reduction thin Hou samples of flat degrees in ± 5 μ m Zhijian, then from samples back along tube core segmentation road direction cutting, formed tube core.
By said of cutting is will samples paste to blue film Shang, and positive close blue film, with vacuum adsorption or other approach will samples fixed in cutting or designated tablets work stage, then from back with cutting or designated tablets of method along tube core segmentation road direction segmentation tube core; with cutting method segmentation tube core Shi, can used designated through samples of method will tube core directly separate, or cutting slot of depth for samples thickness of 1/2 to 1/4, each of into knife volume control in 5 μ m to 10 μ m, then with diameter 1mm to 20mm of metal, and Wooden or plastic sticks from blue film on gently rolling, to separate the die.
When use the dicing way, control pressure of the tool on the dividing road, cutting the groove depth up to 3 between μ m to 10 μ m, then 1mm to 20mm diameter of metal, wood or other sticks from the blue plastic film on gently rolling, to separate the core.

Source: http://www.ch-microtek.com/