LED Sapphire rods prices rebound

OFweek semiconductor lighting network news this year early Sapphire Crystal Rod 2 inch products each mm quotes once fell to 2.8 dollars, capacity economic scale insufficient of manufacturers for not enough cost and have exit, with LED City condition improved, plus other application field increased, crystal rod 2nd quarter quotes began rallied, July quotes more breath jumped rose to 3.8 dollars, currently Taiwan maximum factory for more peak its of Taiwan concentrated electric, operating performance is expected to jumped rose.

Sapphire ingot LED is the most upstream raw material, manufacturers take after a long crystal ingot, slicing to the base plate plant, and finally LED to produce grain grain plant. But now grain prices fell hard up for substrate acceptance of the price is very low, base plate including signs far, Gemmy, Golden grain drill, pass on raw material price rises, prices cannot be effective cost, operational performance test.
Solid Sapphire substrate factory supply

Legal persons pointed out that Sapphire ingot factory in the world at present there are 4 main, where market share is highest in Russia of Monocrystal, Korea STC, United States Rubincon 3rd Taiwan owned by Acme concentrating power 4th hit in mainland China to catch up. It is understood that the highest July price increases were concentrated power, monthly price rise 20%,Rubincon rise 15%, Monocrystal and hit rise 10% respectively.
Spotlight: no expansion
Although cost difficult to pass, but LED grain factory orders continued to come in, Sapphire substrate manufacturers must spare no effort to consolidate supplies. It is understood that the International Optoelectronic exhibition in Taipei a few days ago, Russia Monocrystal executives also came to Taiwan, the major substrate factory have also called on the hope that a stable supply, but also jointly and severally liable to pull prices higher, ingot growth established.
Sapphire ingot market, Acme spokesman Zhang Shengchuan, downstream demand rebound ingot price there is better than it was before, now concentrating power single-month production capacity remains at 45~50 mm, currently there are no expansion plans, capacity utilization and prices not be released.
Sapphire substrate factory xinjing drilling spokesman Li Jizhen said, ingot 3rd quarter of quotations does significantly increase, because the LED on the one hand includes backlight and lighting requirements grow, sapphires have been added other applications, including use in a handheld device, a major supplier of capacity have been booked.
Base plate plan Q3 rose
Wafer current monthly capacity of about 100,000 mm, mainly for personal use, of self-sufficiency about CK. Companies say there are still cheap stocks, so the price impact should be limited in the short term. Base plate plant also plans to raise prices in the 3rd quarter, but manufacturers also said prices also depend on customer acceptance, especially wafer substrate cost is about 50%, and passing is very difficult.

Source: http://www.ch-microtek.com/

Sapphire Rods suppliers of electronic parts needs or blowout growth stocks rose and Sapphire product description and typical application of round bars

Demand for electronic components, or “blowout” growth

Sapphire ingot supplier shares “radiant”
Market research firm IHS 14th a report expected to be released, thanks to the use of Sapphire substrates in electronics hardware rose this year for the manufacture of substrates of 2-inch-diameter Sapphire wafer (Sapphire ingots) consumption will grow 70%, 54-kilometer, estimated that by 2016 annual consumption will be further increased to 84-kilometer in 2012, representing a growth of 166%.

Industry analysts point out that, in parallel with the growth in demand for LED, Smartphone market demand for Sapphire substrates is also achieved strong growth, ease the excess supply over the past several years to Sapphire ingot market obstacles. By 2014, for the production of smartphones and other mobile devices part Sapphire ingot demand total demand ratio rose to 20% from 5% last year. Stimulated by increased demand for sapphires, overseas suppliers stock price rise so far this year.
Growth in demand of “dual drive”
Sapphire ingot is aluminium oxide crystal, mainly used in the production of Sapphire substrates and Sapphire substrate is required for LED lighting substrate base materials, requirements are substantial. IHS reports show 2012 LED market demand accounted for 90% of Sapphire ingot full demand.
Now Sapphire ingot face a growth in demand of the engine. IHS report said current smartphone makers, including Apple are Sapphire ingot used for camera lenses and Home keys (Home) button, this drive Sapphire rapid demand growth.
Son and of the global smart-phone giants such as LG.
1. product description

Sapphire as a product of nature’s hardness is second only to Diamond, and it also has excellent optical and physical properties. So sapphires are often used in special needs on the device and harsh work environments. Sapphire material has the following main features.
①. Sapphire Crystal has a good transmission performance, its light transmittance in the range of 0.15~7.5 μm, covered in the ultraviolet, visible, near-infrared, the infrared band.
II. its expansion coefficient of only 5×10-6/, the melting point of 2050, operating temperatures up to 1900, has excellent resistance to heat shock and high temperature performance.
③. have good mechanical properties, the hardness of Ta Mok’s 9, and also has good compressive strength, compressive strength and flexural strength.
II. it has a very good package, can keep closure system in high vacuum condition, even hot and cold shock does not have any leakage.
II. it has good radiation resistance and electrical insulation properties.
Sapphire has good wear resistance and can process high surface quality, our company can provide surface finish up to S/D40~20 Sapphire rod.
2. typical applications:
①. laser-guided.
II. the piston rod
③. insulators
II. main shaft

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Sapphire-Rod method of ultrasonic vibration grinding

This invention provides a method of ultrasonic vibration grinding of Sapphire rod. Sapphire artifacts blank directed Hou will Shang, and Xia surface mill flat, with wax rubber bond in electric wood Shang, again will electric wood fixed in machine work stage; open ultrasonic, in 17kHz-23kHz Zhijian regulation ultrasonic frequency, makes its in resonance State; open cooling liquid, used within cooling and outside cooling mixed way on artifacts for cooling; for Ultrasound vibration grinding processing; processing completed Hou, will Sapphire artifacts together with electric wood with put in furnace Shang, heating to 115 ℃-125 ℃, Sapphire artifacts removed from the wood, which are 20-140mm in diameter, Sapphire rods of length 50-150mm. The invention has a surface are of good quality, low cost, has a broad prospect, can create significant social and economic benefits.

Sapphire-Rod method of ultrasonic vibration grinding

(A) the technical field of the invention belongs to a material processing method, specifically using ultrasonic vibration grinding method.
(B) background currently, Sapphire rods, mainly through the thin-walled diamond grinding together. Due to the high hardness of Sapphire materials, processing when Sapphire Rod using this method, not only the efficiency is very low, grinding wheels easy to plug, and wear of the grinding wheel, need regular repair and replacement grinding wheels and poor surface roughness, need more subsequent polishing time. Thus this long production period, the cost is high enough, can no longer meet the requirements of modern production.
(C) the purpose of the invention the present invention is to provide a way to improve the surface quality and shorten production cycles, increase productivity, reduce production cost method of ultrasonic vibration grinding of Sapphire rod.
This invention of purpose is such achieved of: 1, and Sapphire artifacts blank directed Hou will Shang, and Xia surface mill flat, with wax rubber bond in electric wood Shang, again will electric wood fixed in machine work stage; 2, and open ultrasonic, in 17kHz-23kHz Zhijian regulation ultrasonic frequency, makes its in resonance State; 3, and open cooling liquid, used within cooling and outside cooling mixed way on artifacts for cooling; 4, and used grain degrees for 80-230#, and diameter for 20-140mm, and length for 50-150mm, and Wall thickness of hollow, thin-walled 0.6-1.5mm electroplated or sintered diamond tools with 800-4000r/min speed and feed along the z axis at a 2-5mm/min rate and fallback arrangement tool: the tool after each feeding 0.02mm, back 0.01mm at a 4-10MM/min rate, feed 0.2-2mm, 1000-3000mm/min back to the surface at a speed of more than 2mm, Then tool again to 1000-3000mm/min of speed into to to back back Qian location above 0.01mm continues to repeat above processing action, until processing completed, used cooling and outside cooling mixed way on artifacts for cooling; 5, and processing completed Hou, will Sapphire artifacts together with electric wood with put in furnace Shang, heating to 115 ℃-125 ℃, will Sapphire artifacts from electric wood Shang removed, which get diameter for 20-140mm, and length for 50-150mm of Sapphire Rod material.
The invention can include a number of features: 1, the wax adhesives is compounded by the following quality percentage: chips: 20%-40%, Rosin: 20%-30%, calcium carbonate, 20%-55%, 5%-10% castor oil.
2, the cooling is directly from a hollow diamond tool on the workpiece, the cooling is through the nozzle adjust the pouring position, coolant wall Jet along the diamond tools in the tool bottom workpiece.

The invention is installed in the spindle NC drilling machine using ultrasonic vibration grinding tools, hollow thin-walled diamond tools rotating at high speed at the same time, with a certain frequency and amplitude of ultrasonic vibration processing along the z axis. The invention of ultrasonic vibration grinding of Sapphire rods, is a combination of Ultrasonic machining and grinding compound machining method, the beneficial effects of the invention: using ultrasonic vibration grinding method, that is combination of Ultrasonic machining and grinding, efficiently create low cost, high quality Sapphire rods. And existing technology phase compared, this invention of main advantage is production efficiency high, than General grinding method efficiency about improve 5 times times; processing surface quality good, surface rough degrees can up Ra0.3-0.9 μ m; processing cost low, while is due to reduced has tool loss, extended has tool using life (than General grinding method about increased 10 times times), on the is due to processing surface quality good, shortened has follow-up of grinding polishing time. Therefore, the technology has broad application prospects, can create significant social and economic benefits.
(D) the specific implementations for example of the invention is described in more detail below: the specific way of implementing a: 1, Sapphire blanks the workpiece redirected the upper and lower surfaces smooth, use a wax adhesive on the bakelite, wood fixed to the machine table. Seal adhesive compounded percentage according to the following quality: chips: 20%-40%, Rosin: 20%-30%, calcium carbonate, 20%-55%, castor oil, 5%-10%;2, open, ultrasonic, 17kHz-23kHz between the ultrasonic frequency, so that it is in resonance State; 3, coolant supply method of internal cooling and cold are two ways; 4, programming and processing. Used grain degrees for 230#, and diameter for 20mm, and length for 50mm, and wall thick for 0.6mm of hollow thin-walled plating gold steel stone tool to 4000r/min speed rotating, while to 5mm/min of speed along z axis into to, and arrangements tool back back action: that tool each into to 0.02mm Hou, to 10MM/min of speed back back 0.01mm, tool each into to 0.5mm, to 800mm/min of speed back back to artifacts surface above 2mm, Then tool feed at 800mm/min speed to fall back position before 0.01mm continue to repeat the above process until finished; 5, after the processing is complete, Sapphire artifacts along with bakelite in the electric arc furnace, heated to 120 ℃, Sapphire artifacts can be removed from the bakelite, obtained 20mm diameter, length of 50mm Sapphire bar. Sapphire Rod surface roughness up to Ra0.3 μg of m,C-axis accuracy ± 0.05.

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Sapphire tube application

1. semiconductor processing

Sapphire in the semiconductor processing industry than quartz, ceramic, and silicon carbide properties superior to Sapphire tube applications include:
Plasma tube
Process gas ejector
Thermocouple components
2. measurement and analysis
Sapphire tubes can be used in a variety of analytical instruments, including:
NMR spectroscopy

Fiber-optic temperature measurement
Online oil analysis
Mass spectrometry analysis
Biological and chemical analysis of samples
Test and analysis of optical communications
3. lighting
Sapphire tube, can be transparent to visible light, infrared, or ultraviolet light, often used in ultra high temperature under high pressure, including:
Infrared countermeasures
Ultraviolet sterilization
Flash
High brightness lamp
Sapphire characteristics
Chemical composition: Al2O3 ceramics: a-Al2O3
Melting point: 2050 ° c boiling point: 3,500 ° c maximum operating temperature for a long time: 2000 c
Hardness: Mohs 9 wear coefficient-1.5 (comparison of steel)
Refractive index (sodium d line) birefringence No=1.768 Ne=1.760
Infrared transmittance: infrared transmittance 3~5 μ m band >85%

Source: http://www.ch-microtek.com/

Description and usage of Sapphire tube

Introductions:

Very high transparency of single crystal Sapphire tubes (is the slow growth of single crystal, non-crystalline, non-machined into nor
High-temperature sintering of alumina powder)
Sapphire tube
1. semiconductor processing
Sapphire in the semiconductor processing industry than quartz, ceramic, and silicon carbide properties superior to Sapphire tube applications include:
Plasma tube

Process gas ejector
Thermocouple components
2. measurement and analysis
Sapphire tubes can be used in a variety of analytical instruments, including:
NMR spectroscopy
Fiber-optic temperature measurement
Online oil analysis
Mass spectrometry analysis
Biological and chemical analysis of samples
Test and analysis of optical communications
3. lighting
Sapphire tube, can be transparent to visible light, infrared, or ultraviolet light, often used in ultra high temperature under high pressure, including:
Infrared countermeasures
Ultraviolet sterilization
Flash
High brightness lamp

Source: http://www.ch-microtek.com/

On the Sapphire substrate, method of forming a semiconductor light emitting diode chip

A in Sapphire lining end of Shang formed semiconductor glow diode tube core of method, will III-V family nitride gallium base compounds semiconductor and quantum trap structure glow diode tube core graphics design into adjacent two edge Sapphire lining end of solutions acting surface, angle for 120 degrees or 60 degrees of parallelogram or diamond structure, tube core segmentation road direction along Sapphire lining end of of solutions acting direction, and will Sapphire lining end of mill thin to 70 to 250 Micron Zhijian, from back along tube core segmentation road direction cutting, formed tube core.

Technical field

The invention belongs to the field of semiconductor technology, especially on the Sapphire substrate, method of forming a semiconductor light emitting diode chip.
Background art
III-V gallium nitride (GaN) based compound semiconductors and quantum-well structure light emitting diode (LED) with high reliability, high efficiency, quick response and long life expectancy, all solid, the advantages of small size, large-screen displays, traffic signals information indicates that, particularly for lighting has a huge application market. However, because Sapphire is not perpendicular to the cleavage and hardness, it is difficult to cleavage into the square-shaped structure of core, split end of yield, which reduces III-V GaN based compound semiconductors and quantum-well structure light emitting diode (LED) costs, expanding market barriers.
Before the invention of the Sapphire substrate, method of forming a semiconductor light emitting diode chip is: led epitaxial growth on Sapphire substrate structure, preparation of n and p electrodes of the diode, and cutting or scribing methods along the square structure designed core segment of road into a single chip. Due to Sapphire lining end of of solutions acting direction not vertical of, dang tube core of a segmentation side direction along Sapphire lining end of solutions acting direction, another a segmentation side will no longer is Sapphire lining end of solutions acting direction, dang cutting or designated crack Shi, along cutting or designated tablets direction produced serious of collapse side or along non-cutting or designated tablets direction cracking, caused tube core damaged, reduced has yield, to solution this problem, General used increased segmentation road of size (is greater than 60 μ m) and are opposite two times cutting of method, such extended has cutting time, And increased the amount of tools, product yields little, increase the cost of products.
Contents of invention
This invention of purpose is provides a in Sapphire lining end of Shang formed semiconductor glow diode tube core of method, its can overcome in glow diode manufacturing process in the designated tablets or cutting Shi along non-segmentation road direction produced collapse side or cracking of problem, can makes designated tablets or cutting of tube core neatly, segmentation road of size can reduced to 40 μ m, improve has products of produced rate and yield, reduced products cost.
This invention a in Sapphire lining end of Shang formed semiconductor glow diode tube core of method, its features is, will III-V family nitride gallium base compounds semiconductor and quantum trap structure glow diode tube core graphics design into adjacent two edge Sapphire lining end of solutions acting surface, angle for 120 degrees or 60 degrees of parallelogram or diamond structure, tube core segmentation road direction along Sapphire lining end of of solutions acting direction, and will Sapphire lining end of mill thin to 70 to 250 Micron Zhijian, from back along tube core segmentation road direction cutting, formed tube core.
Dividing road of dimension less than 60 μ m, at least 40 μ m.
With dry method carved corrosion or wet method corrosion, and lithography, and stripping, and evaporation or sputtering plating film, and alloy, technology making diode of p electrode and n electrode and formed tube core segmentation road, then will Sapphire lining end of from back with grinding of method or ion reduction thin technology reduction thin and polishing to 70 μ m to 250 μ m Zhijian, makes reduction thin Hou samples of flat degrees in ± 5 μ m Zhijian, then from samples back along tube core segmentation road direction cutting, formed tube core.
By said of cutting is will samples paste to blue film Shang, and positive close blue film, with vacuum adsorption or other approach will samples fixed in cutting or designated tablets work stage, then from back with cutting or designated tablets of method along tube core segmentation road direction segmentation tube core; with cutting method segmentation tube core Shi, can used designated through samples of method will tube core directly separate, or cutting slot of depth for samples thickness of 1/2 to 1/4, each of into knife volume control in 5 μ m to 10 μ m, then with diameter 1mm to 20mm of metal, and Wooden or plastic sticks from blue film on gently rolling, to separate the die.
When use the dicing way, control pressure of the tool on the dividing road, cutting the groove depth up to 3 between μ m to 10 μ m, then 1mm to 20mm diameter of metal, wood or other sticks from the blue plastic film on gently rolling, to separate the core.

Source: http://www.ch-microtek.com/

admin

May 24, 2016

The invention relates to such as high-pressure sodium lamps, metal halide lamps, Super Sapphire tubes for gas discharge lamps such as high-pressure mercury lamp.

To date, the high pressure sodium lamp and metal halide lamp, high pressure mercury vapor lamps used in gas discharge lamps, such as Sapphire tube, are made of a single alumina. UV light transmission due to alumina, will cause harm to the human body. In addition, after metal substances such as sodium alumina, attenuation of light larger, life short.
Object of the present invention is to provide an impervious to UV light, harmless to human body and long service life of Sapphire tubes for gas discharge lamps.
Sapphire tube for gas discharge lamps of the invention is made of the following components (weight): alumina (Al2O3) 90~110; magnesium oxide (MgO) 0.05~0.6; cerium oxide (CeO2) 0.05~0.5; titanium oxide (TiO2) 0.05~0.5.

Sapphire tubes for the preparation of the invention of the gas discharge lamp the optimization weight distribution range is: alumina (Al2O3) 90~105; magnesium oxide (MgO) 0.1~0.4; cerium oxide (CeO2) 0.05~0.3; titanium oxide (TiO2) 0.05~0.2.
Preparation of Sapphire for the invention of the gas discharge lamp tube is the best weight ratio: alumina (Al2O3) 95 copies of magnesium oxide (MgO) 0.2; cerium oxide (CeO2) 0.2; titanium oxide (TiO2) 0.1.
Preparation gas put electric with Sapphire tube of method is: first with to ion water and industrial alcohol on Crystal furnace for cleaning; zhihou, will alumina (Al2O3), and magnesium oxide (MgO), and oxidation CE (CeO2) and oxidation titanium (TiO2) reset into has several crystal device of Mo Crucible within; again zhihou, will with raw materials of Mo Crucible reset into Crystal furnace within, while loaded good seed crystal, and on good introduction Crystal Shi of contact location; closed door, On its pumping vacuum to 1~0.1Pa Hou, filling into argon gas to atmospheric; then, on MO crucible for heating, makes therein of raw materials melting and appeared liquid streamlines; at, declined seed crystal axis, makes seed crystal close crystal device above, and on its for baking 3-5 minutes, adjustment introduction Crystal temperature makes seed crystal end Department is like melt non-melt Shi, again will seed crystal contact Crystal table; stay seed crystal and Crystal table Shang melting has of raw materials full melt received Hou, makes crystal table temperature fell to Crystal temperature (2053 ± 10 ℃); last, in Crystal temperature Xia , Drop shoulders, straight up to the Crystal pulling up; after treating the Crystal and Crystal table from the gradually cooling down, to one hour stop after heating, let them cool to room temperature, remove the single crystal Sapphire tube is the invention of Sapphire tubes for gas discharge lamps.
Due to business cost invention of gas put electric with Sapphire tube of above group copies in the contains oxidation CE (CeO2) and oxidation titanium (TiO2) can will UV absorption and conversion into visible, not only increases has gas put electric of brightness, also not on human caused hurt; and due to business cost invention of gas put electric with Sapphire tube of group copies in the contains magnesium oxide (MgO), can anti-sodium, and SC, metal material of corrosion, light failure small, greatly to improve has gas put electric of using life.
Following is the embodiment of the invention according to weigh the ratio of raw materials: alumina 950 grams 2 grams of magnesium oxide; 2 grams of cerium oxide; 1 gram of titanium oxide. Among them, the alumina is 99.95%.
Will above raw materials business cost invention of gas put electric with Sapphire tube of method is: 1. first with to ion water and industrial alcohol wipe NET Crystal furnace furnace; 2. will alumina (Al2O3), and magnesium oxide (MgO), and oxidation CE (CeO2) and oxidation titanium (TiO2) reset into has 10 a crystal device of Mo Crucible within; 3. will with raw materials of Mo Crucible reset into Crystal furnace within. While packed seeds and good Crystal contact position. Then, close the door, after vacuuming it with a vacuum pump to the 1~0.1Pa, filled with argon gas to atmospheric pressure (atmospheric); 4. heating of the molybdenum Crucible, to (2,100 Celsius) makes the raw material melting and liquid line appears; at this point, slowly declining seed crystal axis, seeds close to the mold over and bake for 4 minutes. Adjust the temperature to seed when end is like melt non-melt, will seed contact table, seeding and crystallization of molten material after welding fully on the table, crystalline surface temperature drops to the crystallization temperature (2053 ± 10 degrees c); 5. crystallization temperature, drop shoulders, straight up to Crystal resistant finish. After treating the Crystal and Crystal table from the gradually cooling down, stop heating after one hour, let them cool to room temperature, open the single crystal furnace, remove the single crystal Sapphire tube, is the invention of Sapphire tubes for gas discharge lamps.

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Sapphire tube use

1. semiconductor processing

Sapphire in the semiconductor processing industry than quartz, ceramic, and silicon carbide properties superior to Sapphire tube applications include:
Plasma tube
Gas ejector
Thermocouple components
2. measurement and analysis
Sapphire tubes can be used in a variety of analytical instruments, including:

NMR spectra
Fiber-optic temperature measurement
Online oil analysis
Mass spectrometry
Biological and chemical analysis of samples
Optical communications testing and analysis
3. lighting
Sapphire tube, can be transparent to visible light, infrared, or ultraviolet light, often used in ultra high temperature under high pressure, including:
Infrared countermeasures
UV sterilizers
Flash
High brightness lamp
Sapphire characteristics
Chemical composition: Al2O3 ceramics: a-Al2O3
Melting point: 2050 ° c boiling point: 3,500 ° c maximum operating temperature for a long time: 2000 c
Hardness: Mohs 9 wear coefficient-1.5 (comparison of steel)
Refractive index (sodium d line) birefringence No=1.768 Ne=1.760
Infrared transmittance: infrared transmittance 3~5 μ m band >85%

Source: http://www.ch-microtek.com/

Sapphire tube forming method

Forming method of the present invention provides a Sapphire tubes, belongs to crystals forming technology. Will no visible defects of Sapphire Crystal with rubber fixed in pad Shang; will curing good of Sapphire Crystal fixed in NC milling machine work stage; started NC milling machine, drill by needed Sapphire tube diameter consistent of hole; replaced and by needed Sapphire tube od match of diamond drill tube, again determine NC milling machine tool z axis zero points; in Sapphire Crystal Shang drill Sapphire tube diameter concentric of outside round; will processing good of Sapphire tube moved to thermostat heating platform Shang, set heating temperature for 380~400℃, heating and insulation 60 minutes above Off the Sapphire tube, natural cooling at room temperature. Using this method, put an end to the diamond single cutting positioning error, Sapphire tube disadvantages of poor concentricity; also avoids the laser damage on the Sapphire Crystal surface layer, is not conducive to inner wall of hole defects of polishing.

Technical field

Processing technical field of the invention belongs to the crystals, in particular a Sapphire tube forming method.
Since sapphire crystals with high hardness, wear resistance, high temperature, acid and alkali resistance and other characteristics, and have excellent optical properties and, therefore, are widely used in optical instrumentation, as well as a variety of Visual instrument window interface.
Sapphire tubes are mainly used at present laser drilling and diamond single cut to the required size. Its shortcomings are as follows: laser drilling will damage on the Sapphire Crystal surface layer, is not conducive to holes in the polished wall of diamond single size large positioning errors, poor Sapphire tube concentricity and so on.
Contents of invention
In order to solve the technical problems mentioned above, the present invention provides a fast, simple, low cost, Sapphire tube forming method with small dimensions.
The invention through the following technical solutions to achieve:
(I) no visible defects of Sapphire Crystal fixed with glue pad;
(2) to cure a Sapphire Crystal fixed on the CNC milling machine working table;
(3) start a CNC milling machine, Sapphire tube diameter required to drill holes;
(4) replacement and Sapphire tube outer diameter which corresponds to the required diamond pipe, redefine the NC milling machine tool z-axis zero. v
(5) the drilling at the Sapphire Crystal Sapphire tube diameter concentric cylindrical;
(6) moves the processed Sapphire tubes to constant heating platform, set the heating temperature to 380~400 ° c, heating and insulation for more than 60 minutes;
(7) took Sapphire tube, natural cooling at room temperature.
Using this method, put an end to the diamond single cutting positioning error, Sapphire tube disadvantages of poor concentricity; also avoids the laser damage on the Sapphire Crystal surface layer, is not conducive to inner wall of hole defects of polishing.
As this invention further of improved, in above steps (I) in the, by said of rubber for epoxy resin rubber, and in at room temperature Xia curing 30 minutes above, ensure fixed solid; in above steps (3) in the, by said NC milling machine of speed for 800rpm/min, and into to rate for 6mm/min, in above steps (5) in the, by said NC milling machine of speed for 400rpm/min, and into to rate for 3mm/min, such can guarantee production efficiency and processing precision.
Following specific embodiments of the present invention for further instructions.
Will no bubble, and crack and no other obviously visible defects of Sapphire Crystal with rubber fixed in pad Shang; optimization implementation cases for epoxy resin rubber, in at room temperature Xia curing 30 minutes above; will curing good of Sapphire Crystal moved to NC milling machine work stage and fixture fixed; started vertical NC milling machine, installation and by needed Sapphire tube diameter match of diamond drill tube; determine NC milling machine tool zero points; drill Sapphire tube hole, in speed 800rpm/min, and into to rate 6mm/min conditions Xia, Using NC milling machine in Sapphire Crystal Shang drill Sapphire tube hole; replaced and by needed Sapphire tube od match of diamond drill tube, again determine NC milling machine tool z axis zero points; drill Sapphire tube outside round, in speed 400rpm/min, and into to rate 3mm/min conditions Xia, using NC milling machine in Sapphire Crystal Shang drill Sapphire tube outside round; will processing good of Sapphire Crystal moved to thermostat heating platform Shang; set heating temperature for 380~400 ° c, heating and insulation 40 minutes above Off the Sapphire tube, natural cooling at room temperature.
By adopting the technologies, easy processing, low processing costs, small size error, internal and external surface characteristics of high precision, fast processing size range for diameter < 300mm, San 25mm inner diameter, length < 250mm Sapphire tubes.
Embodiment of the above description is more specific and detailed, but not understood as limitations on the scope of the patent, it is to be noted that, for the technicians in this field, and on the premise of not from the inventive concept, can also be a number of variants and improvements, which belong to the scope of protection of the invention.

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Sapphire tube improve life of the sensor in a gasification reactor

Effectiveness

Parking by fewer accidents increases utilization
Long life thermocouple reduces operating costs (OPEX)
Enhanced security features to prevent release of reactor waste
Double seal system enhances process integrity
Application

High temperature and high pressure process
Measurement of entrained-flow gasification of liquid and gas phases in the process temperature
Application characteristic
Temperatures up to 1800 (3272) ℃ ℃
Pressure 65 bar (943 PSIG)
Pollutant gas (such as hydrogen and carbon)
Challenge
Oil and gas, refining and power industries in the gasification process of measuring instruments in a severe
Environment, including up to 1800 degrees Centigrade (3272) temperature of 65 bar (943 PSIG)
The stress and pollutants against thermocouple. These environments can result in high costs (by the accident stopped
Car led), lower (led by a thermocouple failure) and the frequent replacement of thermocouples.
Moreover, the traditional temperature failure inside the reactor material released into the atmosphere, you may
Would pose a security risk, and increase the risk of fire and injury.
Solutions
To meet the challenge, Emerson process management has developed a gas-tight Sapphire protection tube
Surrounding temperature thermocouple. This will help reduce the exposure of the thermocouple in a gasification reactor
Pollution, thermocouple three times the life of conventional thermocouples life times.
Emerson process management is proposed United States Patent 6,053,453 to protect in this way, patents
Referred from Sapphire casing to support tube in a gas-tight seal. When an external protection
Sapphire within the tube or pipe bursts, double sealing system prevents reactor releases harmful substances
Mass. Optional flange forging process and a shell of connection in order to solve the leakage of hydrogen gas.

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